9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device
Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhi-Xiang Zhang
Topics & Concepts
High-electron-mobility transistorMaterials scienceTransconductanceOptoelectronicsDrain-induced barrier loweringSubthreshold swingRadio frequencyTransistorElectrical engineeringThreshold voltageVoltageEngineeringGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor Quantum Structures and Devices