Dispersion effects in on‐state resistance of lateral Ga <sub>2</sub> O <sub>3</sub> MOSFETs at 300 V switching
Jan Böcker, Kornelius Tetzner, Stephan F. Heucke, Oliver Hilt, Eldad Bahat‐Treidel, Sibylle Dieckerhoff, Joachim Würfl
Abstract
Static characterisation and fast switching processes of lateral β‐Ga 2 O 3 metal oxide semiconductor field‐effect transistors (MOSFETs) are presented. The investigated transistors with 10 mm gate width and 6 µm gate drain distance achieve on‐state resistances of 5 Ω and saturation currents above 2.4 A. Hard switching in a double pulse test setup with an inductive load results in voltage slopes up to 65 V/ns at 300 V input voltage. After longer blocking times and higher DC voltages, a strong dynamic increase in on‐state resistance occurs. Switching with an ohmic load and different load currents reveals only minor influence of the hot electron mechanism during the hard turn on. However, a clear influence of the turn‐on gate drive voltage on the dynamic increase is observed, indicating a shift of the transfer characteristic due to charge trapping in the gate region.