Matching P‐ and N‐type Organic Electrochemical Transistor Performance Enables a Record High‐gain Complementary Inverter
Yazhuo Kuang, Tangqing Yao, Sihui Deng, Jingjin Dong, Gang Ye, Linlong Zhang, Shuyan Shao, Zhongjie Zhu, Jun Liu, Jian Liu
Abstract
Abstract The charge transport of channel materials in n‐type organic electrochemical transistors (OECTs) is greatly limited by the adverse effects of electrochemical doping, posing a long‐standing puzzle for the community. Herein, an n‐type conjugated polymer with glycolated side chains (n‐PT3) is introduced. This polymer can adapt to electrochemical doping and create more organized nanostructures, mitigating the adverse effects of electrochemical doping. This unique characteristic gives n‐PT3 excellent charge transport in the doped state and reversible ion storage, making it highly suitable as an n‐type organic mixed ionic‐electronic conducting (OMIEC) material. n‐PT3 exhibits a high electron mobility of µ ≈ 1.0 cm 2 V −1 s −1 and a figure of merit value of µ C * ≈ 100 F cm −1 V −1 s −1 , representing one of the best results for n‐type OMIEC materials. A new p‐type OMIEC polymer has been synthesized as the channel material for constructing a complementary inverter to match the n‐type OECT channel layer based on n‐PT3. As a result, a voltage gain value of up to 307 VV −1 has been achieved, which is a record value for sub−1 V complementary inverters based on OECTs. This work offers valuable insights into designing electrochemical doping adaptive n‐type OMIEC materials and fabricating high‐gain organic complementary inverters.