Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition
Kexin Deng, Xinhua Wang, Sen Huang, Qimeng Jiang, Haibo Yin, Jie Fan, Guanjun Jing, Yingjie Wang, Tiantian Luan, Wei Ke, Yingkui Zheng, Jingyuan Shi, Xinyu Liu
Topics & Concepts
Materials scienceAtomic layer depositionDielectricOptoelectronicsChemical vapor depositionHigh-κ dielectricDeep-level transient spectroscopyGate dielectricLayer (electronics)TransistorNanotechnologySiliconVoltageElectrical engineeringEngineeringGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials