Decoupling trade-off thermoelectric relations and controlled out-plane lattice dynamics in few-layer MoS2
R. Abinaya, S. Harish, J. Archana, M. Shimomura, M. Navaneethan
Abstract
We report on the thermoelectric properties of few-layer MoS2 fabricated on 290 nm-SiO2/Si by a two-zone atmospheric pressure chemical vapor deposition (CVD) technique. The decoupling of electrical conductivity and Seebeck coefficient is noticed after 592 K, where the electrical conductivity (σ) is linearly increased and the Seebeck coefficient (S) is exponentially increased. The highest values of σ and S are 10.9 S cm−1 and 10312 nV K−1 at 734 K, respectively, and the highest power factor (S2σ) is 116 nW m−1 K−2 at 734 K. The calculated out-plane (A1g) displacement and the decreased A1g phonon lifetime are revealing the reduced phonon transport. The current investigations paved an attention to decouple the thermoelectric properties of few layer MoS2.