Enhancing interfacial charge transfer in a WO<sub>3</sub>/BiVO<sub>4</sub> photoanode heterojunction through gallium and tungsten co-doping and a sulfur modified Bi<sub>2</sub>O<sub>3</sub> interfacial layer
Umesh Prasad, James L. Young, Justin C. Johnson, Deborah L. McGott, Hengfei Gu, Eric Garfunkel, A.M. Kannan
Abstract
Photoanodes containing a WO<sub>3</sub>/BiVO<sub>4</sub> heterojunction have demonstrated promising photoelectrochemical water splitting performance, but the ability to effectively passivate the WO<sub>3</sub>/BiVO<sub>4</sub> interface has limited charge transport and collection.
Topics & Concepts
HeterojunctionDopingPassivationGalliumMaterials scienceCharge (physics)OptoelectronicsTungstenPhotoelectrochemistrySulfurNanotechnologyElectrochemistryChemistryElectrodePhysical chemistryPhysicsMetallurgyQuantum mechanicsLayer (electronics)Advanced Photocatalysis TechniquesCopper-based nanomaterials and applicationsGas Sensing Nanomaterials and Sensors