Highly sensitive X-ray detector based on a β-Ga<sub>2</sub>O<sub>3</sub>:Fe single crystal
Jiawen Chen, Huili Tang, Zhiwei Li, Zhichao Zhu, Mu Gu, Jun Xu, Xiaoping Ouyang, Bo Liu
Abstract
β -Ga 2 O 3 semiconductor crystal is of wide band gap and high radiation resistance, which shows great potential for applications such as medical imaging, radiation detections, and nuclear physical experiments. However, developing β -Ga 2 O 3 -based X-ray radiation detectors with high sensitivity, fast response speed, and excellent stability remains a challenge. Here we demonstrate a high-performance X-ray detector based on a Fe doped β -Ga 2 O 3 ( β -Ga 2 O 3 :Fe) crystal grown by the float-zone growth method, which consists of two vertical Ti/Au electrodes and a β -Ga 2 O 3 :Fe crystal with high resistivity. The resistivity of the β -Ga 2 O 3 :Fe crystal exceeds 10 12 Ω cm owed to the compensation of the Fe ions and the free electrons. The detector shows short response time (0.2 s), high sensitivity (75.3 µC Gy air −1 cm −2 ), and high signal-to-noise ratio (100), indicating great potential for X-ray radiation detection.