All-Solution-Processed High-Performance MoS<sub>2</sub> Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric
Su‐Yeon Joung, Haena Yim, Donghun Lee, Jaehyung Shim, So Yeon Yoo, Yeon Ho Kim, Jin Seok Kim, Hyunjun Kim, Seok‐Ki Hyeong, Junhee Kim, Yong‐Young Noh, Sukang Bae, Myung Jin Park, Ji‐Won Choi, Chul‐Ho Lee
Abstract
Assembling solution-processed van der Waals ( vdW ) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processed vdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS 2 ) as the channel and Dion–Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS 2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm 2 V -1 s -1 ) and an on/off ratio exceeding 10 6 . Additionally, the use of a high- k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10 –11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.