High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics
Chengli Wang, Zhiwei Fang, Ailun Yi, Bingcheng Yang, Zhe Wang, Liping Zhou, Chen Shen, Yifan Zhu, Yuan Zhou, Rui Bao, Zhongxu Li, Yang Chen, Kai Huang, Jiaxiang Zhang, Ya Cheng, Xin Ou
Abstract
Abstract The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 10 6 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.