Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer
Sanjib Kalita, Bhaskar Awadhiya, Papul Changmai
Abstract
Abstract In this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to improve the DC and RF parameters of gallium nitride-based high electron mobility transistors (HEMT). To explore the characteristics, both graded and non-graded double heterojunction high electron mobility transistor (DH-HEMT) structures are optimized using SILVACO-ATLAS physical simulator. Enhanced DC and RF parameters have been observed in the optimized graded DH-HEMT. In this paper, we have also studied the development of the quantum wells at the AlGaN/GaN interfaces due to the conduction band discontinuity in both structures.
Topics & Concepts
High-electron-mobility transistorMaterials scienceOptoelectronicsGallium nitrideHeterojunctionTransistorBarrier layerWide-bandgap semiconductorPolarization (electrochemistry)NitrideLayer (electronics)NanotechnologyElectrical engineeringVoltagePhysical chemistryChemistryEngineeringGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSemiconductor Quantum Structures and Devices