Inherent area-selective atomic layer deposition of ZnS
Chao Zhang, Marko Vehkamäki, Markku Leskelä, Mikko Ritala
Abstract
Development of ALD processes with inherent selectivity is the most straightforward approach for self-aligned AS-ALD where the ALD process itself leads to immediate nucleation on certain substrate materials while long nucleation delays on others.
Topics & Concepts
Atomic layer depositionNucleationSubstrate (aquarium)Layer (electronics)Materials scienceNanotechnologyDeposition (geology)SelectivityProcess (computing)ChemistryChemical engineeringComputer scienceOrganic chemistryCatalysisEngineeringGeologySedimentOperating systemOceanographyPaleontologySemiconductor materials and devicesElectronic and Structural Properties of OxidesZnO doping and properties