Vapor transport deposition of Sb<sub>2</sub>Se<sub>3</sub> thin films for photodetector application
Sen Wen, Xingtian Yin, Haixia Xie, Yuxiao Guo, Jie Liu, Dan Liu, Wenxiu Que, Huan Liu, Weiguo Liu
Abstract
Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb 2 Se 3 films on substrates. The influence of deposition temperature, distance between the Sb 2 Se 3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb 2 Se 3 thin film is employed to fabricate photodetector with a structure of ITO/SnO 2 /Sb 2 Se 3 /Au, where the spin-coated SnO 2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.