Temperature dependent black phosphorus transistor and memory
Arun Kumar, Loredana Viscardi, Enver Faella, Filippo Giubileo, Kimberly Intonti, Aniello Pelella, Stephan Sleziona, Osamah Kharsah, Marika Schleberger, Antonio Di Bartolomeo
Abstract
Abstract We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm 2 V −1 s −1 at 150 K and reduces to 33 cm 2 V −1 s −1 at 340 K, when the voltage gate sweep range is <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>±</mml:mo> <mml:mspace width="0.25em"/> </mml:math> 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.