A combined AIMD and DFT study of the low-energy radiation responses of GaN
Ming Jiang, Nuo Cheng, Xinyu Zhu, Xuan-Liang Hu, Zihan Wang, Ning Liu, Shuo Song, Sheng-Ze Wang, Xu‐Sheng Liu, Chandra Veer Singh
Abstract
(N occupying the Ga lattice site) defects decrease the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.
Topics & Concepts
Materials scienceRadiationOptoelectronicsPhysicsOpticsGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor Quantum Structures and Devices