Good dielectric performance and broadband dielectric polarization in Ag, Nb co‐doped TiO <sub>2</sub>
Pengfei Liang, Jie Zhu, Di Wu, Hui Peng, Xiaolian Chao, Zupei Yang
Abstract
Abstract Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO 2 ‐based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag + /Nb 5+ co‐doped (Ag 1/4 Nb 3/4 ) x Ti 1− x O 2 (ANTO x ) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10 3 and 1.6 × 10 4 at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron‐pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTO x ceramics.