Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives
Ekaterina Vyacheslavova, I. A. Morozov, Dmitri A. Kudryashov, A V Uvarov, A I Baranov, A. A. Maksimova, С. Н. Аболмасов, А.С. Гудовских
Abstract
The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. The way to achieve the conical shape of Si texture using low Ar dilution is demonstrated. Also, a possibility of silicon nanowire width reduction keeping a high density of array is shown. No damage to the Si structure caused by Ar plasma was detected. The introduction of Ar into the plasma also does not affect electrical properties. The lifetime value after cryogenic etching with 5 sccm Ar flow remains at the same level of 0.7 ms. The resulting black silicon has a low total reflectance of 1 ± 0.5% in the range of 450-1000 nm in the overall 100 mm Si wafer surface.