Boron vacancy: a strategy to boost the oxygen reduction reaction of hexagonal boron nitride nanosheet in hBN–MoS<sub>2</sub> heterostructure
Dipayan Roy, Karamjyoti Panigrahi, Bikram Kumar Das, Uday Kumar Ghorui, Souvik Bhattacharjee, Madhupriya Samanta, Sourav Sarkar, Kalyan Kumar Chattopadhyay
Abstract
RHE) with an unaltered electrochemically active surface area (ESCA) after long-term cycling. Thus, vacancy engineering in hBN has proved to be an efficient approach to unlock the potential of catalytic performance enhancement.
Topics & Concepts
NanosheetVacancy defectHeterojunctionMaterials scienceBand gapBoron nitrideBoronTafel equationNanotechnologyChemical engineeringOptoelectronicsChemistryElectrochemistryElectrodeCrystallographyPhysical chemistryOrganic chemistryEngineeringMXene and MAX Phase Materials2D Materials and ApplicationsElectrocatalysts for Energy Conversion