Spintronic devices and applications using noncollinear chiral antiferromagnets
Ankit Shukla, Siyuan Qian, Shaloo Rakheja
Abstract
Sn are also discussed. Recent experimental demonstrations of a finite room-temperature tunneling magnetoresistance in tunnel junctions with chiral antiferromagnets opens the prospect of developing spintronic devices with fully electrical readout. Applications of chiral antiferromagnets, including non-volatile memory, high-frequency signal generators/detectors, neuro-synaptic emulators, probabilistic bits, thermoelectric devices, and Josephson junctions, are highlighted. We also present analytic models that relate the performance characteristics of the device with its design parameters, thus enabling a rapid technology-device assessment. Effects of Joule heating and thermal noise on the device characteristics are briefly discussed. We close the paper by summarizing the status of research and present our outlook in this rapidly evolving research field.