Laterally Coupled 2D MoS<sub>2</sub> Synaptic Transistor With Ion Gating
Yarong Wang, Yafen Yang, Zhenyu He, Hao Zhu, Lin Chen, Qingqing Sun, David Wei Zhang
Abstract
The dynamically active synaptic elements are the fundamental building blocks in neuromorphic systems towards artificial intelligence with computing and sensing capabilities. Here, a two-dimensional (2D) MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> synaptic transistor is fabricated by using poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) as a laterally coupled ion-conducting electrolyte. Due to the strong electric double layer (EDL) effect, a low operating voltage of 1 V and a high current on/off ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> have been obtained. In addition, short-term and long-term plasticity of typical synaptic behaviors have been successfully simulated, such as excitatory postsynaptic current, paired pulse facilitation long-term potentiation, long-term depression, and dynamic filtering. These results can provide new opportunities and strategies in building hybrid and low-dimensional neuromorphic systems for future artificial intelligence applications.