Direct observation of cation diffusion driven surface reconstruction at van der Waals gaps
Wenjun Cui, Weixiao Lin, Weichao Lu, Chengshan Liu, Zhixiao Gao, Hao Ma, Wen Zhao, Gustaaf Van Tendeloo, Wenyu Zhao, Qingjie Zhang, Xiahan Sang, Qingjie Zhang, Xiahan Sang
Abstract
Abstract Weak interlayer van der Waals (vdW) bonding has significant impact on the surface/interface structure, electronic properties, and transport properties of vdW layered materials. Unraveling the complex atomistic dynamics and structural evolution at vdW surfaces is therefore critical for the design and synthesis of the next-generation vdW layered materials. Here, we show that Ge/Bi cation diffusion along the vdW gap in layered GeBi 2 Te 4 (GBT) can be directly observed using in situ heating scanning transmission electron microscopy (STEM). The cation concentration variation during diffusion was correlated with the local Te 6 octahedron distortion based on a quantitative analysis of the atomic column intensity and position in time-elapsed STEM images. The in-plane cation diffusion leads to out-of-plane surface etching through complex structural evolutions involving the formation and propagation of a non-centrosymmetric GeTe 2 triple layer surface reconstruction on fresh vdW surfaces, and GBT subsurface reconstruction from a septuple layer to a quintuple layer. Our results provide atomistic insight into the cation diffusion and surface reconstruction in vdW layered materials.