Negative differential resistance in memristive systems: historical evolution, mechanisms and neuromorphic applications of niobium oxide devices
Hongyi Lu, Siyu Xie, Weijian Zhang, Yue Chen, Jianming Tao, Chinmayee Mandar Mhaskar, Ayan Roy Chaudhuri, Yingbin Lin, Jiaxin Li, Sanjay Mathur, Zhigao Huang
Abstract
cycles) negative differential resistance with biophysically plausible spiking dynamics-enabled by its dual current-controlled and thermally driven mechanisms-making it ideal for energy-efficient neuromorphic primitives. This paper reviews the complex phenomenon of NDR and its applications in niobium oxide memristors while analyzing its potential future applications in electronic systems. By outlining the NDR effect and its applications in niobium oxide memristors, this paper aims to provide valuable insights for researchers in the field.
Topics & Concepts
Neuromorphic engineeringMemristorNanotechnologyNiobiumMaterials scienceDifferential (mechanical device)OxideElectronic circuitNanoelectronicsNiobium oxideComputer scienceElectronic engineeringOptoelectronicsElectrical engineeringArtificial intelligenceEngineeringArtificial neural networkAerospace engineeringMetallurgyAdvanced Memory and Neural ComputingNeural dynamics and brain functionCCD and CMOS Imaging Sensors