Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes
Young Geun Song, Ji Eun Kim, Jae Uk Kwon, Suk Yeop Chun, Keunho Soh, Sahn Nahm, Chong‐Yun Kang, Jung Ho Yoon
Abstract
Active cation-based diffusive memristors featuring essentially volatile threshold switching have been proposed for novel applications, such as a selector in a one-selector-and-one-resistor structure and signal generators in neuromorphic computing. However, the high variability of the switching behavior, which results from the high electroforming voltage, external environmental conditions, and transition to the non-volatile switching mode in a high-current range, is considered a major impediment to such applications. Herein, for the first time, we developed a highly reliable threshold switching device immune to atmospheric changes based on an ultraviolet-ozone (UVO)-treated diffusive memristor consisting of Ag and SiO 2 nanorods (NRs). UVO treatment forms a stable water reservoir on the surface of SiO 2 NRs, facilitating the redox reaction and ion migration of Ag. Consequently, diffusive memristors possess reliable switching characteristics, including electroforming-free, repeatable, and consistent switching with resistance to changes in ambient conditions and compliance levels during operation. We demonstrated that our approach is suitable for various metal oxides and can be used in numerous applications.