High conductivity and low activation energy in p-type AlGaN
Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Seiji Mita, Cristyan Quiñones-García, Yan Guan, Baxter Moody, Pramod Reddy, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Abstract
Record-low p-type resistivities of 9.7 and 37 Ω cm were achieved in Al0.7Ga0.3N and Al0.8Ga0.2N films, respectively, grown on single-crystal AlN substrate by metalorganic chemical vapor deposition. A two-band conduction model was introduced to explain the anomalous thermal behavior of resistivity and the Hall coefficient. Relatively heavy Mg doping (5 × 1019 cm−3), in conjunction with compensation control, enabled the formation of an impurity band exhibiting a shallow activation energy of ∼30 meV for a wide temperature range. Valence band conduction associated with a large Mg ionization energy was dominant above 500 K. The apparently anomalous results deviating from the classical semiconductor physics were attributed to fundamentally different Hall scattering factors for impurity and valence band conduction. This work demonstrates the utility of impurity band conduction to achieve technologically relevant p-type conductivity in Al-rich AlGaN.