Emergent solution based IGZO memristor towards neuromorphic applications
Raquel Azevedo Martins, Emanuel Carlos, Jonas Deuermeier, Maria Pereira, Rodrigo Martins, Elvira Fortunato, Asal Kiazadeh
Abstract
s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems.
Topics & Concepts
Neuromorphic engineeringMaterials scienceMemristorCrossbar switchFabricationOptoelectronicsOhmic contactResistive random-access memoryNanotechnologyElectronic engineeringVoltageComputer scienceArtificial neural networkElectrical engineeringLayer (electronics)Artificial intelligenceEngineeringAlternative medicinePathologyMedicineAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsPhotoreceptor and optogenetics research