Ferromagnetism and half-metallicity in two-dimensional <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>M</mml:mi><mml:mi mathvariant="normal">O</mml:mi><mml:mo> </mml:mo><mml:mo>(</mml:mo><mml:mi>M</mml:mi><mml:mo>=</mml:mo><mml:mi>Ga</mml:mi><mml:mo>,</mml:mo><mml:mi>In</mml:mi><mml:mo>)</mml:mo></mml:mrow></mml:math> monolayers induced by hole doping
Ruishen Meng, Michel Houssa, Konstantina Iordanidou, Geoffrey Pourtois, Valeri Afanasiev, A. Stesmans
Abstract
Identification of two-dimensional (2D) materials with magnetic properties has received strong research attention in the development of advanced spin-based devices. By means of first-principles calculations, we investigate the stability, electronic properties, and the hole-doping-induced magnetic properties of metal oxide ($M\mathrm{O}, M=\mathrm{Ga},\mathrm{In}$) monolayers. They are intrinsically nonmagnetic stable semiconductors, with high energetic, vibrational, and thermal stability. Hole doping can switch them from nonmagnetic to ferromagnetic and turn them into half-metals over a wide range of hole densities. Monte Carlo simulations predict that the highest Curie temperature of the GaO monolayer can reach \ensuremath{\sim}125 K. Our results indicate that monolayer $M\mathrm{O}$ could be eligible candidate materials for 2D spintronic devices.