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34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices

Win-San Khwa, Ping-Chun Wu, Jui-Jen Wu, Jian-Wei Su, Ho-Yu Chen, Zhao-En Ke, Ting-Chien Chiu, Junming Hsu, Chiao-Yen Cheng, Yu-Chen Chen, Chung‐Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea‐Tiong Tang, Meng‐Fan Chang

202434 citationsDOI

Abstract

Advanced AI-edge chips require computational flexibility and high-energy efficiency (EEF) with sufficient inference accuracy for a variety of applications. Floating-point (FP) numerical representation can be used for complex neural networks (NN) requiring a high inference accuracy; however, such an approach requires higher energy and more parameter storage than does a fixed-point integer (INT) numerical representation. Many compute-in-memory (CIM) designs have a good EEF for INT multiply-and-accumulate (MAC) operations; however, few support FP-MAC operations [1–3]. Implementing INT/FP dual-mode (DM) MAC operations presents challenges (Fig. 34.2.1), including (1) low-area efficiency, since FP-MAC functions become idle during INT-MAC operations; (2) a high system-level latency, due to NN data update interruptions on small-capacity SRAM-CIM without concurrent write-and-compute functionality; and (3) high-energy consumption, due to repeated system-to-CIM data transfers during computation. This work presents an INT/FP DM macro featuring (1) a DM zone-based input (IN) processing scheme (ZB-IPS) to eliminate subtraction in exponent (EXP) computation, while reusing the alignment circuit in INT-mode to improve EEF and area efficiency (AEF); (2) a DM local-computing-cell (DM-LCC), which reuses the EXP addition as an adder tree stage for INT-MAC to improve AEF in INT mode; and (3) a stationary-based two-port gain-cell (GC) array (SB-TP-GCA) to support concurrent data updates and computation, while reducing system-to-CIM and internal data accesses to improve EEF and latency (T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAC</inf> ). A 16nm 96-Kb INT-FP DM GC-CIM macro with 4T GCs is fabricated to support FP-MAC with 64 accumulations (N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ACCU</inf> ) for BF16-IN, BF16-W, and FP32-OUT as well as an INT-MAC with N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ACCU</inf> =128 for 8b-IN, 8b-W, and 23b-OUT. This CIM macro achieves a 163.3TOPS/W INT-MAC and a 91.2TFLOPS/W FP-MAC EEF.

Topics & Concepts

MacroEnhanced Data Rates for GSM EvolutionInteger (computer science)Mode (computer interface)Dual modeDual (grammatical number)Computer scienceFloating pointPoint (geometry)TelecommunicationsMathematicsEngineeringAlgorithmElectronic engineeringOperating systemArtProgramming languageGeometryLiteratureNeural Networks and Reservoir ComputingSemiconductor materials and devicesAdvanced Memory and Neural Computing
34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices | Litcius