Photonic THz mixers based on iron-doped InGaAs embedded in a plasmonic microcavity
C. Tannoury, Victor Merupo, Giuseppe Di Gioia, Vanessa Avramovic, David Troadec, Jean‐François Lampin, Guillaume Ducournau, Steffen Breuer, Björn Globisch, S. Barbieri, Robert B. Kohlhaas, E. Peytavit
Abstract
We present an optoelectronic mixer for the terahertz (THz) frequency-domain based on an iron-doped InGaAs layer integrated in a plasmonic microcavity. We show that this structure, under 1550-nm-wavelength illumination, allows for more than 70% absorption efficiency in a 220 nm-thin InGaAs absorber and very high Roff/Ron >1000. It leads to THz mixers driven by 1550-nm lasers showing conversion loss as low as ∼30 dB at 300 GHz. Therefore, this design is very promising for application as receivers in high-data-rate wireless telecom, in cw-THz spectrometers, or in photonics-enabled THz spectrum analyzers.