Switching facilitated by the simultaneous formation of oxygen vacancies and conductive filaments in resistive memory devices based on thermally annealed TiO2/a-IGZO bilayers
Gergely Tarsoly, Jae‐Yun Lee, Fei Shan, Sung‐Jin Kim
Topics & Concepts
Resistive random-access memoryMaterials scienceOptoelectronicsAmorphous solidBilayerAnnealing (glass)Non-volatile memoryThin filmIndium tin oxideThin-film transistorIndiumElectrodeNanotechnologyLayer (electronics)Composite materialChemistryPhysical chemistryOrganic chemistryMembraneBiochemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsCCD and CMOS Imaging Sensors