Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain
Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, Wenjun Xu, Yang Wang, Guojian Ding, Haojun Yang, Qi Feng, Wanjun Chen, Bo Zhang
Abstract
The reverse blocking p-type GaN (p-GaN) gate high electron mobility transistors with multi-column p-GaN/Schottky alternate-island drain (MPS-HEMTs) are proposed and experimentally demonstrated. The p-GaN/AlGaN junctions (P-islands) and Schottky-contacts (S-islands) are alternately located by the side of the drain electrode. Multiple columns of these alternate-islands are formed in the staggered pattern successively, which can regulate the distribution of current density in the forward conduction and facilitate the 3-dimensional expanding (3DE) effect of depletion regions under the reverse bias as revealed by simulations. The fabricated MPS-HEMTs exhibit the low on-set voltage <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {ON}}$ </tex-math></inline-formula> of 0.31 V benefiting from the S-islands, the high reverse breakdown voltage <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BV</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</sub> of -1092 V from the P-islands, and simultaneously a low specific on-resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\text {ON.SP}}$ </tex-math></inline-formula> of 8.3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {GD}}$ </tex-math></inline-formula> of 22 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> . The high-performance MPS-HEMTs have shown a much-improved trade-off among <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {ON}}$ </tex-math></inline-formula> , <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BV</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</sub> , and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\text {ON.SP}}$ </tex-math></inline-formula> , which indicates the proposed multi-column p-GaN/Schottky alternate-island drain structure to be promising in p-GaN power device platforms.