Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe<sub>2</sub>
Jonas Keukelier, Karl Opsomer, Thomas Nuytten, Stefanie Sergeant, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar, Christophe Detavernier
Abstract
Raman spectroscopy and electrical measurements are performed on sputtered Ge<sub>x</sub>Se<sub>1−x</sub> thin films to identify and link bond presence to electrical behaviour.
Topics & Concepts
Materials scienceRaman spectroscopyThin filmBond lengthAnalytical Chemistry (journal)CrystallographyCondensed matter physicsNanotechnologyCrystal structureOpticsChromatographyChemistryPhysicsPhase-change materials and chalcogenidesChalcogenide Semiconductor Thin FilmsSolid-state spectroscopy and crystallography