40 Gbit/s waveguide photodiode using III–V on silicon heteroepitaxy
Keye Sun, Junyi Gao, Daehwan Jung, John E. Bowers, Andréas Beling
Abstract
Low-dark-current waveguide modified uni-traveling carrier photodiodes (PDs) are demonstrated by direct heteroepitaxy of InGaAs/InAlGaAs on silicon templates. The PDs have a dark current of 0.1 µA at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mo>−</mml:mo> <mml:mn>3</mml:mn> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">V</mml:mi> </mml:mrow> </mml:math> bias and an internal (external) responsivity of 0.78 A/W (0.27 A/W). The 3 dB bandwidth is 28 GHz, and open eye diagrams are detected at 40 Gbit/s.
Topics & Concepts
ResponsivityPhotodiodeOpticsDark currentMaterials scienceGigabitOptoelectronicsSiliconWaveguideBandwidth (computing)Gallium arsenidePhotodetectorPhysicsTelecommunicationsComputer sciencePhotonic and Optical DevicesAdvanced Photonic Communication SystemsSemiconductor Quantum Structures and Devices