Fundamental linewidth of an AlN microcavity Raman laser
Kewei Liu, Shunyu Yao, Yulei Ding, Zihao Wang, Yanan Guo, Jianchang Yan, Junxi Wang, Changxi Yang, Chengying Bao
Abstract
Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.
Topics & Concepts
Laser linewidthRaman spectroscopyLasing thresholdMaterials scienceRaman laserOpticsOptoelectronicsLaserSapphireRaman scatteringPhysicsPhotonic and Optical DevicesAdvanced Fiber Laser TechnologiesSemiconductor Lasers and Optical Devices