Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications
Ling-Zhi Tang, Yang Huang, Chen Wang, Zhenxuan Zhao, Yiming Yang, Jiming Bian, Huaqiang Wu, Zengxing Zhang, David Wei Zhang
Abstract
We report a halide perovskite based flexible threshold-switched memristor with ultra-high speed as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.
Topics & Concepts
MemristorHalideMaterials sciencePerovskite (structure)Flexibility (engineering)Neuromorphic engineeringOptoelectronicsArtificial neuronNanotechnologyComputer scienceElectronic engineeringArtificial intelligenceArtificial neural networkChemical engineeringEngineeringMathematicsInorganic chemistryStatisticsChemistryPerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingTransition Metal Oxide Nanomaterials