Synaptic plasticity in zinc oxide-based flexible invisible transparent memristor by modulating oxygen concentration
Asutosh Patnaik, Arpan Acharya, Kabin Tiwari, Priyanka Saha, N. K. Sahoo, Debashis Panda
Abstract
Artificial synapses based on memristors are used in emulating the synaptic plasticity behavior of a human brain. Here, we have proposed a transparent memristor based on aluminum zinc oxide (AZO) on a flexible substrate—polyethylene naphthalate. We have analyzed the elemental composition of the gadget subjected to the optimized flow rate of Ar/O2 = 2/1 by x-ray photoelectron spectroscopy. The prepared AZO/ZnO/indium-doped tin oxide memristor exhibits a bipolar switching behavior with Vset/Vreset of 1.4/−2.0 V. The results reflect an acceptable endurance of >500 cycles and retention of 104 s. The optimized device shows an improvement in the non-linearity of potentiation—2.31/depression—3.05 and has more than 25 cycles of stability. The transparency is checked using a UV-visible spectrophotometer showing 90% transparency in the visible region making the device suitable for applications in invisible electronics. Our results reflect that the proposed device can be used as a transparent electrode in making artificial synapses for neuromorphic applications.