Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth
Takeshi Mitani, Kazuma Eto, Naoyoshi Komatsu, Yuichiro Hayashi, Hiromasa Suo, Tomohisa Kato
Topics & Concepts
Materials scienceDislocationLayer (electronics)Surface finishEnergy conversion efficiencySilicon carbideChemical vapor depositionThreading (protein sequence)Yield (engineering)Surface roughnessCrystal growthComposite materialCrystallographyOptoelectronicsChemistryBiochemistryProtein structureSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesSilicon and Solar Cell Technologies