Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample
J. Serafińczuk, K. Moszak, Ł. Pawlaczyk, Wojciech Olszewski, D. Pucicki, R. Kudrawiec, D. Hommel
Topics & Concepts
SapphireEnhanced Data Rates for GSM EvolutionDislocationMaterials scienceCharacterization (materials science)Etching (microfabrication)Threading (protein sequence)Sample (material)OpticsOptoelectronicsComposite materialNanotechnologyComputer scienceChemistryPhysicsNuclear magnetic resonanceLayer (electronics)TelecommunicationsProtein structureLaserChromatographyGaN-based semiconductor devices and materialsZnO doping and propertiesMetal and Thin Film Mechanics