Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach
Kaicheng Jia, Ziteng Ma, Wendong Wang, Yongliang Wen, Huanxin Li, Yeshu Zhu, Jiawei Yang, Yuqing Song, Jiaxin Shao, Xiaoting Liu, Qi Lu, Yixuan Zhao, Jianbo Yin, Luzhao Sun, Hailin Peng, Jincan Zhang, Li Lin, Zhongfan Liu
Abstract
Chemical vapor deposition (CVD) has emerged as a promising approach for the controlled growth of graphene films with appealing scalability, controllability, and uniformity. However, the synthesis of high-quality graphene films still suffers from low production capacity and high energy consumption in the conventional hot-wall CVD system. In contrast, owing to the different heating mode, cold-wall CVD (CW-CVD) system exhibits promising potential for the industrial-scale production, but the quality of as-received graphene remains inferior with limited domain size and high defect density. Herein, we demonstrated an efficient method for the batch synthesis of high-quality graphene films with millimeter-sized domains based on CW-CVD system. With reduced defect density and improved properties, the as-received graphene was proven to be promising candidate material for electronics and anti-corrosion application. This study provides a new insight into the quality improvement of graphene derived from CW-CVD system, and paves a new avenue for the industrial production of high-quality graphene films for potential commercial applications.