Enhanced memory window and efficient resistive switching in stabilized BaTiO3-based RRAM through incorporation of Al2O3 interlayer
Akendra Singh Chabungbam, Minjae Kim, Atul Thakre, Dong‐Eun Kim, Hyung‐Ho Park
Topics & Concepts
Resistive random-access memoryMaterials scienceTinResistive touchscreenOptoelectronicsVoltageReset (finance)Non-volatile memoryLayer (electronics)Crossbar switchThin filmNanotechnologyElectrical engineeringEngineeringMetallurgyFinancial economicsEconomicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials