Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor
Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Li, Lei Wang, Xinke Liu, Yasuo Koide, Liwen Sang
Topics & Concepts
Materials scienceOptoelectronicsHigh-electron-mobility transistorPassivationTransistorDielectricSchottky diodeQuantum tunnellingInsulator (electricity)Boron nitrideGallium nitrideElectric fieldSemiconductorWide-bandgap semiconductorSchottky barrierField-effect transistorBreakdown voltageGate dielectricVoltageElectrical engineeringNanotechnologyDiodeLayer (electronics)EngineeringPhysicsQuantum mechanicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesGraphene research and applications