Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET
G. Busatto, Antonio Di Pasquale, Daniele Marciano, Simone Palazzo, A. Sanseverino, F. Velardi
Topics & Concepts
Quantum tunnellingThermal conductionMOSFETTrap (plumbing)Gate oxideMaterials scienceOxideSilicon carbideSiliconConduction bandIonOptoelectronicsTime-dependent gate oxide breakdownMechanism (biology)Valence bandPower MOSFETElectrical engineeringNanotechnologyChemistryVoltagePhysicsEngineeringBand gapElectronComposite materialTransistorMeteorologyQuantum mechanicsMetallurgyOrganic chemistrySemiconductor materials and devicesSilicon Carbide Semiconductor TechnologiesElectrostatic Discharge in Electronics