Decade of 2D-materials-based RRAM devices: a review
Muhammad Muqeet Rehman, Hafiz Mohammad Mutee Ur Rehman, Jahan Zeb Gul, Woo Young Kim, Khasan S. Karimov, Nisar Ahmed
Abstract
voltage cycles) and extended mechanical robustness (500 bending cycles). Resistive switching properties of 2D materials have been further enhanced by blending them with metallic nanoparticles, organic polymers and inorganic semiconductors in various forms.
Topics & Concepts
Materials scienceResistive random-access memoryNanotechnologyEngineering physicsOptoelectronicsElectrical engineeringEngineeringVoltageAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesMXene and MAX Phase Materials