Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes
Akshay M. Arabhavi, Rimjhim Chaudhary, Ralf Flückiger, Diego Marti, Sara Hamzeloui, Filippo Ciabattini, Wei Quan, Martin Leich, Olivier Ostinelli, C. R. Bolognesi
Abstract
We report uniform Type-II GaInAsSb/InP UTC-PDs, and compare their performance to devices fabricated with GaAsSb uniform and graded (composition and doping) absorbers of the same thickness. The quaternary UTC-PDs show a transit limited bandwidth of 274 GHz in contrast to 107 and 185 GHz for uniform and graded GaAsSb absorber UTC-PDs. Because the uniform quaternary and ternary UTC-PDs only differ in their absorber material, the findings conclusively demonstrate enhanced transport in GaInAsSb. Performance comparison to GaInAs-based devices from the literature suggest that GaInAsSb is a superior absorber material for λ = 1.55 μm high-speed photodetectors. Additionally, the external responsivity of the GaInAsSb UTC-PDs (0.094 A/W) is ~34% higher than the GaAsSb PDs (0.070 A/W). This is the first demonstration of a quaternary GaInAsSb absorber in UTC-PDs.