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Design and Investigation of Recessed-T-Gate Double Channel HEMT with InGaN Back Barrier for Enhanced Performance

Megha Sharma, Rishu Chaujar

2021Arabian Journal for Science and Engineering29 citationsDOI

Topics & Concepts

TransconductanceMaterials scienceControllabilityHigh-electron-mobility transistorOptoelectronicsBarrier layerElectrical engineeringTransistorVoltageLayer (electronics)NanotechnologyEngineeringMathematicsApplied mathematicsGaN-based semiconductor devices and materialsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design
Design and Investigation of Recessed-T-Gate Double Channel HEMT with InGaN Back Barrier for Enhanced Performance | Litcius