Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy
Kazuya Suzuki, Shigemi Mizukami
Abstract
We studied MgO barrier magnetic tunnel junctions (MTJs) comprising perpendicularly magnetized MnGa and FeCoB electrodes. In those perpendicular (p-) MTJs, we utilized thin metastable bcc CoMn alloys as an interlayer between MnGa and MgO to enhance the tunnel magnetoresistance (TMR) effect. Moreover, we investigated the effect of a thin Mg interlayer between MnGa and CoMn. Owing to the interlayer engineering, we achieved a TMR ratio over 100%, the highest value observed for p-MTJs with a tetragonal MnGa electrode. Our study contributes to the further development of spintronic devices using p-MTJs with various Mn-based tetragonal alloy electrodes.
Topics & Concepts
Tetragonal crystal systemMagnetoresistanceMaterials scienceCondensed matter physicsAlloySpintronicsTunnel magnetoresistanceElectrodeFerromagnetismPerpendicularMagnetic anisotropyMagnetic fieldMetallurgyCrystallographyMagnetizationChemistryCrystal structurePhysicsQuantum mechanicsPhysical chemistryGeometryMathematicsMagnetic properties of thin filmsZnO doping and propertiesHeusler alloys: electronic and magnetic properties