Enhanced sub-band gap photosensitivity by an asymmetric source–drain electrode low operating voltage oxide transistor
Utkarsh Pandey, Akhilesh Kumar Yadav, Nila Pal, Pijush Kanti Aich, Bhola Nath Pal
Abstract
The photosensitivity of a phototransistor can be enhanced by using an asymmetric work function source–drain (S–D) electrode.
Topics & Concepts
Materials scienceOptoelectronicsPhotosensitivityElectrodeTransistorOxideVoltageBand gapThreshold voltageElectrical engineeringMetallurgyPhysical chemistryChemistryEngineeringThin-Film Transistor TechnologiesSemiconductor materials and devicesNanowire Synthesis and Applications