Exploration of the intrinsic factors limiting the photocurrent density in ferroelectric BiFeO<sub>3</sub> thin film
Jafar Hussain Shah, Heng‐Yun Ye, Yong Liu, Ahmed Mahmoud Idris, Anum Malik, Yi Zhang, Hongxian Han, Can Li
Abstract
The limiting factor for low photocurrent density of polarization switchable ferroelectric BiFeO<sub>3</sub> film is due to severe charge recombination at the interfaces of the domain walls rather than recombination inside the domains.
Topics & Concepts
PhotocurrentFerroelectricityLimitingPolarization (electrochemistry)Materials scienceRecombinationOptoelectronicsCondensed matter physicsRecombination ratePhysicsChemistryDielectricEngineeringMechanical engineeringPhysical chemistryBiochemistryGeneMultiferroics and related materialsFerroelectric and Piezoelectric MaterialsDielectric properties of ceramics