An investigation of angle effect on heavy ion induced single event effect in SiC MOSFET
Xinkun Yan, Zhenfeng He, Q.Y. Chen, P.P. Hu, S. Gao, Shiwei Zhao, C. Cai, Bing Ye, Peihan Zhao, Yongsheng Sun, J. Liu
Topics & Concepts
MOSFETMaterials scienceTransistorOptoelectronicsIrradiationLeakage (economics)Electric fieldSilicon carbideField-effect transistorGate oxideOxideVoltageElectrical engineeringPhysicsComposite materialEngineeringMacroeconomicsMetallurgyQuantum mechanicsNuclear physicsEconomicsRadiation Effects in ElectronicsSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies