Tuning 2D magnetism in Fe3+XGeTe2 films by element doping
Shanshan Liu, Zihan Li, Ke Yang, Enze Zhang, Awadhesh Narayan, Xiaoqian Zhang, Jiayi Zhu, Wenqing Liu, Zhiming Liao, Masaki Kudo, Takaaki Toriyama, Yunkun Yang, Qiang Li, Linfeng Ai, Ce Huang, Jiabao Sun, Xiaojiao Guo, Wenzhong Bao, Qingsong Deng, Yanhui Chen, Lifeng Yin, Jian Shen, Xiaodong Han, Syo Matsumura, Jin Zou, Yongbing Xu, Xiaodong Xu, Hua Wu, Faxian Xiu
Abstract
Abstract Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (TC) or phase transitions. One of the challenges, however, is the realization of high TC 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2 films with TC above room temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously modulated TC in a broad range of 185–320 K has been achieved. This widely tunable TC is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2 fashion.