Hydrogen-bonding enables two-dimensional metal/semiconductor tunable contacts approaching the quantum limit and the modified Schottky–Mott limit simultaneously
Dexing Liu, Ziyi Liu, Jiahao Zhu, Min Zhang
Abstract
) at the interface. Hydrogen-bonding contacts are further shown to be an advantageous approach to achieve near-perfect N-type contacts for emerging 2D nitride, oxide, halide, and chalcogenide semiconductors that can simultaneously approach the modified Schottky-Mott limit. We finally discuss the general design concepts for hydrogen-bonding contacts, demonstrating their potential to go beyond vdW contacts in achieving ideal electrical contacts in 2D semiconductors.
Topics & Concepts
Ohmic contactvan der Waals forceLimit (mathematics)Schottky diodeMaterials scienceSemiconductorSchottky barrierMott insulatorCondensed matter physicsHydrogen bondQuantumOptoelectronicsNanotechnologyQuantum mechanicsPhysicsMoleculeDiodeMathematicsLayer (electronics)Mathematical analysisSemiconductor materials and devicesMolecular Junctions and NanostructuresSemiconductor materials and interfaces