Template-Assisted Dry Transfer Doping of Two-Dimensional Semiconductors
Yu Zhang, Ping-An Chen, Zheyi Lu, Yu Liu, Huan Wei, Jiangnan Xia, Jiaqi Ding, Zhenqi Gong, Chengyuan Peng, Wen Shi, Yuan Liu, Lei Liao, Yuanyuan Hu
Abstract
Doping has been extensively studied as an effective means of modulating the electrical properties of two-dimensional (2D) semiconductors. However, precise methods for p- and n-type doping in specific regions remain underdeveloped, hindering high-performance devices and integrated circuits. We present a novel technique, template-assisted dry transfer doping (TADTD), which enables precise control over doping regions, patterns, polarities, and levels in 2D semiconductors. Utilizing photolithography, TADTD allows for the creation of patterned dopant films that are transferred to MoTe 2 without the damaging effects of traditional methods. The effectiveness of TADTD is demonstrated through the fabrication of p- and n-type MoTe 2 field-effect transistors (FETs) using molecular dopants Magic Blue and N-DMBI, respectively. Additionally, we construct functional complementary logic circuits, including inverters and NAND and NOR gates, utilizing selectively doped MoTe 2 channels. The precise doping control achieved with TADTD highlights its potential for advancing 2D semiconductor technology and integration into future CMOS applications.